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MITSUBISHI SEMICONDUCTOR GaAs FET
MGF491xG Series
SUPER LOW NOISE InGaAs HEMT
DESCRIPTION
The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures
OUTLINE DRAWING
4.00.2 1.850.2
1
Unit:millimeters
minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series is mounted in the super 12 tape.
0.50.15
FEATURES
* Low noise figure @f=12GHz MGF4916G:NFmin.=0.80dB(MAX.) MGF4919G:NFmin.=0.50dB(MAX.) * High associated gain Gs=12.0dB(MIN.) @f=12GHz
2
2
0.50.15
3
APPLICATION
L to Ku band low noise amplifiers.
o1.80.2
QUALITY GRADE
* GG
1 GATE 2 SOURCE
RECOMMENDED BIAS CONDITIONS
* VDS=2V,ID=10mA * Refer to Bias Procedure
3 DRAIN
GD-16
ABSOLUTE MAXIMUM RATINGS (Ta=25C)
Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature Ratings -4 -4 60 50 125 -65 to +125 Unit V V mA mW C C
ELECTRICAL CHARACTERISTICS (Ta=25C)
Symbol V(BR)GDO IGSS IDSS VGs(off) gm GS NFmin. Parameter Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage Transconductance Associated gain Minimum noise figure IG=-10A VGS=-2V,VDS=0V VGS=0V,VDS=2V VDS=2V,ID=500A VDS=2V,ID=10mA VDS=2V,ID=10mA f=12GHz MGF4916G MGF4919G Test conditions Min -3 - 15 -0.1 - 12.0 - - Limits Typ - - - - 75 13.5 - - Max - 50 60 -1.5 - - 0.80 0.50 Unit V A mA V mS dB dB dB
Nov. 97
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF491xG Series
SUPER LOW NOISE InGaAs HEMT
TYPICAL CHARACTERISTICS (Ta=25C)
ID vs. VGS
50 Ta=25C VDS=2V 40 60 50 40 30 30 20 20 10 VGS=0V
ID vs. VDS
Ta=25C VGS=-0.1V/STEP
10 0 -0.5 0 0 1 2 3 4 5
0 -1.0
GATE TO SOURCE VOLTAGE VGS(V)
DRAIN TO SOURCE VOLTAGE VDS(V)
NF & Gs vs. ID (MGF4919G)
Ta=25C VDS=2V f=12GHz GS 12 10 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0 5 10 15 20 25 NF 8 16 14
DRAIN CURRENT ID (mA)
Nov. 97
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF491xG Series
SUPER LOW NOISE InGaAs HEMT
S PARAMETERS
Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Mag. 0.990 0.967 0.925 0.874 0.831 0.783 0.743 0.706 0.682 0.670 0.639 0.617 0.591 0.571 0.565 0.560 0.533 0.484
(Ta=25C,VDS=2V,ID=10mA) S11 Angle -22.3 -40.6 -53.2 -70.9 -88.8 -105.7 -120.6 -132.1 -144.7 -159.1 -171.8 175.3 163.1 152.9 140.1 125.8 109.8 91.2 Mag. 5.775 5.585 5.401 5.161 4.899 4.626 4.316 4.100 3.887 3.765 3.617 3.526 3.421 3.349 3.333 3.349 3.356 3.337 S21 Angle 158.1 140.6 128.9 111.8 96.8 80.8 67.9 56.4 43.2 30.1 17.5 4.5 -8.1 -17.4 -29.6 -44.4 -59.9 -77.0 Mag. 0.020 0.035 0.051 0.064 0.075 0.083 0.087 0.090 0.093 0.094 0.095 0.096 0.094 0.094 0.096 0.098 0.101 0.104 S12 Angle 71.9 61.8 53.3 42.4 29.3 19.0 9.1 4.1 -6.4 -14.3 -24.4 -33.5 -42.5 -50.9 -61.1 -74.1 -88.8 -105.1 Mag. 0.533 0.514 0.489 0.457 0.424 0.391 0.369 0.357 0.357 0.351 0.339 0.329 0.328 0.328 0.343 0.351 0.337 0.310 S22 Angle -19.2 -33.4 -42.9 -58.2 -71.6 -87.5 -100.6 -110.8 -122.3 -133.0 -143.5 -154.0 -163.9 -171.3 179.5 170.5 161.8 151.6 K 0.10 0.19 0.27 0.35 0.43 0.50 0.57 0.64 0.69 0.72 0.80 0.86 0.91 0.95 0.96 0.98 1.01 1.11 MSG/MAG (dB) 28.8 26.5 24.3 21.6 19.8 18.1 16.8 15.9 15.1 14.7 14.0 13.5 13.0 12.7 12.7 12.7 12.5 12.1
NOISE PARAMETERS
Freq. (GHz) 4 8 12 14 18
(Ta=25C,VDS=2V,ID=10mA) opt Angle(deg.) 49 95 139 166 -142 Rn () 12.5 4.7 2.3 1.8 1.5 NFmin.(dB) MGF4916G MGF4919G 0.31 0.24 0.47 0.35 0.60 0.45 069 0.50 0.88 0.61 Gs (dB) 18.3 15.9 13.5 12.3 9.9
Magn. 0.76 0.59 0.48 0.41 0.34
Nov. 97

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